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 NCP5603 High Efficiency Charge Pump Converter
The NCP5603 is an integrated circuit dedicated to the medium power White LED applications. The power conversion is achieved by means of a charge pump structure, using two external ceramic capacitors, making the system extremely tiny. The device supplies a constant voltage to the load from a low battery voltage source. It is particularly suited for the High Efficiency LED used in low cost, low power applications, with high extended battery life.
Features http://onsemi.com MARKING DIAGRAM
* * * * * * * * * *
Wide Battery Supply Voltage Range: 2.7 < VCC < 5.5 V Automatic Operating Mode 1X, 1.5X and 2X Improves Efficiency Dimmable Output Current Up to 350 mA Output Pulsed Current Selectable Output Voltage High Efficiency Up To 90% Supports 2.5 kV ESD, Human Body Model Supports 200 V Machine Model ESD Low 40 mA Short Circuit Current Pb-Free Package is Available
DFN10 MN SUFFIX CASE 485C
5603 ALYW G
5603 A L Y W G
= Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package
Applications
* High Power LED * Back Light Display * High Power Flash
PIN CONNECTIONS
Vout C1P Vbat Fsel Vsel 1 2 3 4 5 (Top View) 10 C2P 9 8 7 6 C1N GND C2N EN
ORDERING INFORMATION
Device NCP5603MNR2 Package Shipping
QFN10, 3x3 3000/ Tape & Reel
NCP5603MNR2G QFN10, 3x3 3000/ Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
November, 2005 - Rev. 1
Publication Order Number: NCP5603/D
NCP5603
Vbat C3 GND 4.7 mF/16 V 2 C1 1 mF/16 V C1P C2P 9 C1N Vout 3 U1 Vbat C2N 7
C2 1 mF/16 V
C4 GND 1 mF/16 V
10 1
PWM FSEL VSEL
6 EN/PWM 4 Fsel 5 Vsel 8 GND D1 GND NCP5603
LWT67C
LWT67C
LWT67C
D2
D3
10 W
10 W
10 W
D4 10 W R4
R1
R2
GND
Figure 1. Typical Application
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2
R3
LWT67C
NCP5603
Vbat Vbat 3 Vbat 10 C2P
LEVEL SHIFTER AND MOSFET DRIVE
POWER SWITCHES
7 C2N
Thermal Shutdown
9 C1N
Vbat
LOGIC AND ANALOG CONTROL
2 C1P
Vout
1 Vout
Fsel 4
GND Vbat -
Vsel 5
+
EN 6 BANDGAP
GND
GND 8
GND
Figure 2. Block Diagram
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NCP5603
PIN FUNCTION DESCRIPTION
Pin 1 Symbol Vout Type OUTPUT, PWR Description This pin supplies the regulated voltage to the external LED. Since high current transients are present in this pin, care must be observed to avoid voltage spikes in the system. Good high frequency layout technique must be observed. One side of the external charge pump capacitor (CFLY) is connected to this pin, associated with C1P, pin 9. Using low ESR ceramic capacitor is recommended to optimize the Charge Pump efficiency. This pin shall be connected to the power source, and must be decoupled to Ground by a low ESR capacitor (2.2 mF/6.3 V ceramic or better (see Note 1)). This pin is used to program the operating frequency: Fsel = 0 Fop = 262 kHz Fsel = 1 Fop = 650 kHz This pin setup the output voltage: Vsel = 0 Vout = 4.5 V Vsel = 1 Vout = 5.0 V This pin controls the activity of the NCP5603 chip: EN/PWM = Low the chip is deactivated, the load is disconnected EN/PWM = High the chip is activated and the load is connected to the regulated output current. The NCP5603 can operate either in a continuous mode (EN/PWM = High), or can be controlled by a PWM pulse applied to EN/PWM to dim the output light. When EN/PWM is Low, the external load is disconnected from the converter, providing a very low standby current. The pull down built-in resistance makes sure the chip is deactivated even if the EN/PWM pin is disconnected (see Note 2). 7 C2N POWER One side of the external charge pump capacitor (CFLY) is connected to this pin, associated with C2P, pin 10. Using low ESR ceramic capacitor is recommended to optimize the Charge Pump efficiency. This pin combines the Signal ground and the Power ground and must be connected to the system ground. Using good quality ground plane is mandatory to avoid spikes on the logic signal lines. One side of the external charge pump capacitor (CFLY) is connected to this pin, associated with C1N, pin 2. Using low ESR ceramic capacitor is recommended to optimize the Charge Pump efficiency. One side of the external charge pump capacitor is connected to this pin, associated with C2N, pin 7. Using low ESR ceramic capacitor is recommended to optimize the Charge Pump efficiency.
2
C1N
POWER
3 4
Vbat Fsel
POWER INPUT, Digital
5
Vsel
INPUT, Digital
6
EN/PWM
INPUT, Digital
8
GND
GROUND
9
C1P
POWER
10
C2P
POWER
1. Using ceramic 16 V working voltage capacitors is recommended to compensate the DC bias effect encountered with such type of capacitors. 2. Any external impedance connected to pin 6 shall be 10 kW or higher.
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NCP5603
MAXIMUM RATINGS
Rating Power Supply Voltage Power Supply Current Digital Input Pins Digital Input Pins Output Voltage ESD Capability (Note 3) Human Body Model Machine Model QFN10, 3x3 Package Power Dissipation @ Tamb = +85C Thermal Resistance, Junction-to-Air (RqJA) Operating Ambient Temperature Range Operating Junction Temperature Range Maximum Junction Temperature Storage Temperature Range Latchup Current Maximum Rating Moisture Sensitivity Level (MSL) Symbol Vbat Ibat Vin Iin Vout VESD 2.5 200 PDS RqJA TA TJ TJmax Tstg 580 68.5 -40 to +85 -40 to +125 +150 -65 to +150 100 mA per JEDEC standard, JESD78 1 per IPC/JEDEC standard, J-STD-020A kV V mW C/W C C C C Value 7.0 800 -0.5 V < Vbat < Vbat +0.5 V < 6.0 V "5.0 5.5 Unit V mA V mA V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3. This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) "2.5 kV per JEDEC Standard: JESD22-A114 Machine Model (MM) "200 V per JEDEC Standard: JESD22-A115. 4. The maximum package power dissipation limit must not be exceeded.
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NCP5603
ELECTRICAL CHARACTERISTICS @ 2.85 V < Vbat < 5.5 V (-40C to +85C ambient temperature, unless otherwise noted).
Characteristic Power Supply Quiescent Current @ Vbat = 3.7 V, Iout = 0 mA @ Pulsed Clock Fop = 262 kHz @ Pulsed Clock Fop = 650 kHz @ Continuous Clock Fop = 262 kHz @ Continuous Clock Fop = 650 kHz Shutdown Current @ Iout = 0 mA, EN/PWM = L @ 2.85 < Vbat < 4.2 V @ Vbat = 5.5 V Output Voltage Regulation @ Vsel = 1, 2.85 V < Vbat < 4.5 V @ Vsel = 0, 2.85 V < Vbat < 4.5 V Continuous DC Load Current (Note 7) Cin = 1.0 mF, CFLY = 1.0 mF, Cout = 1.0 mF @ Vsel = 1, 3.2 V < Vbat < 4.5 V @ Vsel = 0, 3.2 V < Vbat < 5.5 V @ Vsel = 1, 2.85 V < Vbat < 4.5 V @ Vsel = 0, 2.85 V < Vbat < 5.5 V Pulsed Output Current Cin = 10 mF, CFLY = 1.0 mF, Cout = 10 mF, Vbat = 3.6 V Pwidth = 500 ms, -40C < TA < +65C Output Continuous Short Circuit Current, Vout = 0 V Operating Frequency (Note 5) @ Fsel = 0, 2.85 V < Vbat < 4.5 V @ Fsel = 1, 2.85 V < Vbat < 4.5 V Output Voltage Ripple (Note 6) Fop = 262 kHz, Iout = 60 mA (Note 7) @ Cout = 1.0 mF @ Cout = 4.7 mF Digital Input High Level Digital Input Low level Output Power Efficiency @ Vbat = 3.3 V, Vout = 5.0 V, Iout = 60 mA, Fop = 262 kHz @ Vbat = 3.9 V, Vout = 5.0 V, Iout = 160 mA, Fop = 650 kHz Thermal Shut Down Protection Hysteresis 3 Pin 3 3 Symbol Vbat Iqsc - - - - 3 Istdb - - 3 Vout 4.75 4.275 3 Iout - - - - 3 IFLH - 3 Isch Fop 210 500 VPP - - 4, 5, 6 4, 5, 6 VIH VIL Ph - - THSD - - 75 84 160 20 - - - - C 1.3 - 150 25 - - - 60 - 0.4 V V % 262 650 320 1000 mV - 350 40 - 100 mA kHz - - - - 160 200 80 120 mA 5.0 4.5 5.25 4.725 mA - - 2.5 4.0 V - - 1.0 2.1 0.8 1.2 - - mA Min 2.85 Typ - Max 5.5 Unit V mA
5. Temperature range guaranteed by design, not production tested. 6. Smaller footprint associated to lower working voltages (10 V or 6.3 V, size 0805 or 0602) can be used, but care must be observed to prevent DC bias effect on the capacitance final value. See capacitor manufacturer data sheets. 7. Ceramic X7R, ESR < 100 mW, SMD type capacitors are mandatory to achieve the Iout specifications. Depending upon the PCB layout, it might be necessary to use two 2.2 mF/6.3 V/ceramic capacitors in parallel, yielding an improved Vout noise over the temperature range. On the other hand, care must be observed to take into account the DC bias impact on the capacitance value. See ceramic capacitor manufacturer data sheets. 8. Digital inputs undershoot < - 0.30 V to ground, Digital inputs overshoot < 0.30 V to Vbat.
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NCP5603
TYPICAL CHARACTERISTICS
100 IOUT = 120 mA EFFICIENCY (%) 100 IOUT = 120 mA
90 EFFICIENCY (%)
90
80
80
70
70
60
60
50 2.5
3.0
3.5
4.0 Vin (V)
4.5
5.0
5.5
50 2.5
3.0
3.5
4.0 Vbat (V)
4.5
5.0
5.5
Figure 3. Operating Modes Transitions and Output Power Efficiency @ Vout = 4.5 V/262 kHz
100 IOUT = 160 mA 90 EFFICIENCY (%) -40C 25C 80 85C
Figure 4. Operating Modes Transitions and Output Power Efficiency @ Vout = 4.5 V/650 kHz
70
60
50 2.5
3.0
3.5
4.0 Vbat (V)
4.5
5.0
5.5
Figure 5. Operating Modes Transitions and Output Power Efficiency @ Vout = 5.0 V/650 kHz
Figure 6. Typical Output Voltage Ripple
4.8 IOUT = 200 mA 4.7 4.6 Vout (V) 25C 4.5 4.4 4.3 4.2 2.5
-40C 85C
3.0
3.5
4.0 Vbat (V)
4.5
5.0
5.5 Test conditions: Vbat = 3.6 V, Vout = 5 V, Load = 4*LW87S, ILED = 25mA
Figure 7. Typical Output Voltage Line Regulation
Figure 8. Output Voltage Startup from Scratch
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NCP5603
TYPICAL CHARACTERISTICS
Test conditions: Vbat = 3.6 V, Vout = 5 V, Load = 4*LW87S, ILED = 25mA
Figure 9. Typical PWM Dimming
VCC 3 C1 10 mF/10 V GND C2 1 mF/6.3 V EN PWR-FLASH FSEL GND VSEL
NCP5603 Vbat C1P C1N EN/PWM Fsel Vsel GND R1 1W GND C2N 7 C2 1 mF/16 V
2
C1P Vout
10 1
9 6 4 5 8
C4 10 mF
D1 OSRAM: LWW5SG GOLDEN DRAGON
GND
GND
Figure 10. Typical High Power Flash Circuit
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NCP5603
500 450 400 350 Iout (mA) 300 250 200 150 100 50 0 2.5 3.0 Vout = 4.5 V FSEL = 0 Load = OSRAM / LWW5SG PWR SWITCH = MGSF1N03 3.5 Vbat (V) 4.0 4.5 R=1W R = 2.2 W R=0W
Figure 11. NCP5603 Output Current
Table 1. Ceramic Preferred Capacitors
Manufacturer TDK TDK TDK Type/Series C3216X5R1C475MT C2012X5R1C225MT C2012X5R1C105MT Format 1206 0805 0805 Value 4.7 mF / 16 V 2.2 mF / 16 V 1.0 mF / 16 V
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NCP5603
GND C3 1.0 mF/16 V D4 1 D3 Vout LW67C D2 LW67C D1 LW67C C2 1 mF/16 V 10 LW67C TP2 1 ISENSE R9 82 W R8 82 W R7 82 W R6 82 W GND
TP1
7
C2N
C1P
1 Vout EN/PWM
U1 NCP5603
3
2
9
6
4
5
8
GND
C1N
C1P
Vsel
Fsel
Vbat
C1 1 mF/16 V
GND
Vsel
S3 Vsel
GND R4
VCC
Fsel C7 100 nF 6 7 U3A MC14538B Q Q C4 4.7 mF/16 V
S2 Fsel
GND
10 k R5 10 k 10
U3B MC14538B
9 C8 100 nF 15 C 12 A 11 B 13 CLR GND R11 1.5 k D5 PWM GND GND Q
VCC
GND P1 200 kA
RC
A B CLR
C6 100 nF GND C5 33 nF GND
VCC S1 4 NL27WZ14 U2B VCC CNT/PWM 3 6 NL27WZ14 U2A GND Z3 GND GROUND 1 10
S4 POWER
1 GND +
2 - +
PK1 2 x 1.5 V
VCC
Adjust PWM
10 k
R10 10 k
14 GND
2
1
4
4 mm
4 mm
R2 4 100 k
GND
VCC
J1
J2
3
R1
Figure 12. Evaluation Board Schematic Diagram http://onsemi.com
5 3
R3
RC
C
Q
+
NCP5603
Figure 13. Evaluation Board: Silk View (Top View)
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NCP5603
PACKAGE DIMENSIONS
DFN10 MN SUFFIX CASE 485C-01 ISSUE A
D A B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. 6. DETAILS A AND B SHOW OPTIONAL VIEWS FOR END OF TERMINAL LEAD AT EDGE OF PACKAGE. DIM A A1 A3 b D D2 E E2 e K L L1 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.45 2.55 3.00 BSC 1.75 1.85 0.50 BSC 0.19 TYP 0.35 0.45 0.00 0.03
EDGE OF PACKAGE
PIN 1 REFERENCE 2X 2X
0.15 C
0.15 C 0.10 C
10X
0.08 C SIDE VIEW A1 C
10X
L
1
5
A1 E2
10X
K
DETAIL B Side View (Optional)
10 10X
6
b BOTTOM VIEW
0.10 C A B 0.05 C
NOTE 3
0.5651
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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12
EE EE
CCCC CCCC CCCC
DETAIL B
E
L1 DETAIL A Bottom View (Optional)
TOP VIEW
(A3) A
SEATING PLANE
EXPOSED Cu
D2 e
DETAIL A
MOLD CMPD
A3
SOLDERING FOOTPRINT*
2.6016
2.1746
1.8508
3.3048
10X 10X
0.3008
0.5000 PITCH
DIMENSIONS: MILLIMETERS
NCP5603
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NCP5603/D


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